In the Institute IFOX at HZB, we work on functional oxide and semiconductor nanodevices for energy efficient data sensing or processing. Our work covers the range from material synthesis to nanoscale devices and circuit integration. We investigate the electrical and optical properties in different types of materials and devices. We have several collaborations through EU and national projects within Europe.
The PhD student will work in the DFG project ‘MEMMEA’ targeting development of biological neuronal activity probes integrating CMOS Multi-Electrode Array (MEA) chips with memristive devices. The project involves collaboration with expert group of TU Berlin for circuit design, device modelling at Forschungs Zentrum Jülich, and biological characterization at NMI Natural and Medical Sciences Institute at the University of Tübingen. In the PhD thesis, the student will focus on the development of CMOS back-end fabrication of memristive devices (metal filament based and oxide filament based) and their integration on the back-end of CMOS MEA chips. The student will also work on basic circuit design for on-chip characterization of small memristive arrays. The student will benefit from our established expertise on memristive devices. He/she will closely collaborate with experts and other PhD students from the consortium groups involved. The project provides a unique opportunity to learn from memristive device level to chip applications of implants for brain neuron signal processing in real time.
The PhD student will benefit from a dynamic and state-of-the-art-equipped environment at HZB (cleanroom access, advanced electrical characterization) combined with the outstanding environment of Berlin in terms of universities (including access to some facilities) and research institutes. He/she will be working in a multidisciplinary team within international collaborations.
Tasks
- CMOS back-end fabrication of memristive devices, particularly conductive bridge and oxide resistive switching devices
- Standard DC and pulsed electrical characterization of memristive devices and arrays.
- Evaluation of different device architectures and optimization of device parameters for signal processing of pre-recorded neuronal signals.
- Circuit design for programming of small memristive arrays.
- Collaboration with experts for CMOS MEA circuit design, device compact model development and biological characterization for neurons.
- Presentation at international conferences and scientific publications of experimental results
Requirements
- Completed Master Degree in Electrical Engineering or Physics with excellent academic record and interest for device and circuit co-development
- Research experience in nanodevice fabrication
- Experience with electrical characterization such as CV/IV bench tests, pulsed IV measurements
- Experience or knowledge in analog or digital circuits
- Experience working in cleanroom and morphological characterization such as SEM, AFM would be beneficial
- Good written and spoken skills in English
- High motivation for research, zeal to learn, and open mind for cooperative work as well as a team-oriented and communicative work ethic
What we offer
Fixed term contract for 36 months . The salary is based on the Collective Agreement for the German Public Service (TVöD-Bund).
We particularly welcome applications from women. Preference will be given to handicapped applicants provided equal suitability.
How to apply
We look forward to receiving your application via our application management system by 19.05.2021. For reasons of data protection regulations, we are unfortunately unable to consider applications that reach us by email or by mail in the application process.
For German version, please click on the following link: German Version.
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